fig8

Prediction of the atomic structure and thermoelectric performance for semiconducting Ge<sub>1</sub>Sb<sub>6</sub>Te<sub>10</sub> from DFT calculations

Figure 8. Dimensionless figure of merit ZT of stackings (A) GST-I and (B) GST-II as a function of carrier concentration for p- and n-type dopings at different temperatures. The dots in (A) represent the experimental results[25] at the concentration of 7.3 × 1020 cm-3.

Journal of Materials Informatics
ISSN 2770-372X (Online)
Follow Us

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/