fig5
Figure 5. Total DOS of conduction bands (red line) and valence bands (orange line) around the respective CBMs and VBMs for stackings (A) GST-I and (B) GST-II. Electronic band structures of stackings (C) GST-I and (D) GST-II. The blue and red dashed lines indicate the Fermi level at the carrier concentrations of 2 × 1019 and 1 × 1020 cm-3, respectively. The positive and negative carrier concentrations represent the p- and n-type dopings, respectively. CBM: Conduction band minimum; VBM: valence band maximum.
