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From:  Prediction of the atomic structure and thermoelectric performance for semiconducting Ge1Sb6Te10 from DFT calculations
Prediction of the atomic structure and thermoelectric performance for semiconducting Ge<sub>1</sub>Sb<sub>6</sub>Te<sub>10</sub> from DFT calculations

Figure 4. PDOS and pCOHP of stackings: (A) GST-I; (B) GST-II; and (C) GST-IV. The Ef is set to 0 eV.

Journal of Materials Informatics
ISSN 2770-372X (Online)
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